 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TELEFUNKEN Semiconductors CNY18 Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead TO72 metal can package for high reliability requirements. Applications Galvanically separated circuits. Features D Hermetically sealed case D DC isolation test voltage: 500 V D Low coupling capacity D Current Transfer Ratio, CTR selected in groups D Low temperature coefficient of the CTR Pin Connection A C C E 95 10792 Rev. A1: 20.09.1995 1 (5) CNY18 Absolute Maximum Ratings Input (Emitter) Parameters Reserve voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions TELEFUNKEN Semiconductors tp 10 ms Tamb 25C Symbol VR IF IFSM PV Tj Value 3 60 1.5 100 125 Unit V mA A mW C Output (Detector) Parameters Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC PV Tj Value 32 5 100 150 125 Unit V V mA mW C Tamb 25C Coupler Parameters DC isolation test voltage Total power dissipation Ambient temperature range Storage temperature range Soldering temperature 1) Test Conditions Tamb 25C 2 mm from case, t 10 s Symbol VIO 1) Ptot Tamb Tstg Tsd Value 500 250 -55 to +100 -55 to +125 260 Unit V mW C C C related to standard climate 23/50 DIN 50 014 2 (5) Rev. A1: 20.09.1995 TELEFUNKEN Semiconductors CNY18 Electrical Characteristics Tamb = 25C Input (Emitter) Parameters Forward voltage Reserve current Test Conditions IF = 60 mA VR = 3 V Type Symbol VF IR Min. Typ. 1.25 0.35 Max. 1.7 10 Unit V mA Output (Detector) Parameters Collector emitter breakdown voltage Collector dark current Collector emitter capacitance Test Conditions IC = 1 mA VCE = 10 V, IF = 0, E = 0 f = 1 MHz VCE = 0 VCE = 10 V VCE = 30 V Type Symbol V(BR)CEO ICEO Min. 32 Typ. Max. Unit V nA 2 CCEO CCEO CCEO 7 3.5 2.5 pF pF pF Coupler Parameters DC isolation test voltage Isolation resistance IC/IF Test Conditions t=1s VIO = 500 V, 40% relative humidity VCE = 5 V, IF = 10 mA IC = 1 mA, IF = 10 mA VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz E and C short-cctd. C (E earthed) E (C earthed) Type Symbol VIO 1) RIO 1) Group III IV V CTR CTR CTR VCEsat fc Min. 500 1010 0.25 0.40 0.60 0.50 0.80 1.2 0.2 170 Typ. Max. Unit V W Collector emitter saturation voltage Cut-off frequency V kHz Coupling capacitances A and C short-cctd. Ck Ck Ck 1.4 1.1 0.1 pF pF pF 1) related to standard climate 23/50 DIN 50014 Rev. A1: 20.09.1995 3 (5) CNY18 Switching Characteristics VS = 5 V Type CNY18 td[ms] 2.6 tr[ms] 2.4 TELEFUNKEN Semiconductors RL = 100 W, see figure 1 RL = 1 kW, see fig. 2 ton[ms] ts[ms] tf[ms] toff[ms] IC[mA] ton[ms] toff[ms] IF[mA] 5.0 0.3 2.7 30 5 11 13.5 20 IF 0 R G = 50 W tp T = 0.01 IF +5V IC = 5 mA; adjusted through input amplitude t p = 50 ms Channel I Oscilloscope Channel II 50 W 95 10900 R L w 1 MW C L v 20 pF 100 W Figure 1. Test circuit, non-saturated operation IF 0 IF = 20 mA +5V IC R G = 50 W tp T = 0.01 t p = 50 ms Channel I Oscilloscope Channel II 50 W 95 10901 R L w 1 MW C L v 20 pF 1 kW Figure 2. Test circuit, saturated operation 4 (5) Rev. A1: 20.09.1995 TELEFUNKEN Semiconductors CNY18 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A1: 20.09.1995 5 (5) |
Price & Availability of CNY18
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |